Finfet channel on oxide structures and related methods

ABSTRACT

A method for fabricating a semiconductor device having a substantially undoped channel region includes forming a plurality of fins extending from a substrate. In various embodiments, each of the plurality of fins includes a portion of a substrate, a portion of a first epitaxial layer on the portion of the substrate, and a portion of a second epitaxial layer on the portion of the first epitaxial layer. The portion of the first epitaxial layer of each of the plurality of fins is oxidized, and a liner layer is formed over each of the plurality of fins. Recessed isolation regions are then formed adjacent to the liner layer. The liner layer may then be etched to expose a residual material portion (e.g., Ge residue) adjacent to a bottom surface of the portion of the second epitaxial layer of each of the plurality of fins, and the residual material portion is removed.

PRIORITY DATA

The present application is a continuation of U.S. patent applicationSer. No. 16/726,518, filed Dec. 24, 2019, which is a continuation ofU.S. patent application Ser. No. 15/714,557, filed Sep. 25, 2017, nowU.S. Pat. No. 10,522,407, which is a division of U.S. patent applicationSer. No. 14/788,300, filed Jun. 30, 2015, now U.S. Pat. No. 9,773,705,entitled “FINFET CHANNEL ON OXIDE STRUCTURES AND RELATED METHODS”, thedisclosures of which are herein incorporated by reference in theirentirety.

BACKGROUND

The electronics industry has experienced an ever increasing demand forsmaller and faster electronic devices which are simultaneously able tosupport a greater number of increasingly complex and sophisticatedfunctions. Accordingly, there is a continuing trend in the semiconductorindustry to manufacture low-cost, high-performance, and low-powerintegrated circuits (ICs). Thus far these goals have been achieved inlarge part by scaling down semiconductor IC dimensions (e.g., minimumfeature size) and thereby improving production efficiency and loweringassociated costs. However, such scaling has also introduced increasedcomplexity to the semiconductor manufacturing process. Thus, therealization of continued advances in semiconductor ICs and devices callsfor similar advances in semiconductor manufacturing processes andtechnology.

Recently, multi-gate devices have been introduced in an effort toimprove gate control by increasing gate-channel coupling, reduceOFF-state current, and reduce short-channel effects (SCEs). One suchmulti-gate device that has been introduced is the fin field-effecttransistor (FinFET). The FinFET gets its name from the fin-likestructure which extends from a substrate on which it is formed, andwhich is used to form the FET channel. FinFETs are compatible withconventional complementary metal-oxide-semiconductor (CMOS) processesand their three-dimensional structure allows them to be aggressivelyscaled while maintaining gate control and mitigating SCEs. Inconventional processes, an anti-punch through (APT) ion implantation isperformed through FinFET fin elements to prevent punch through of FinFETsource/drain depletion regions. However, ion implantation of dopants(e.g., dopants used for APT implants) through fins of FinFET devicesdirectly contributes to the formation of defects and the introduction ofimpurities in a FinFET channel region. Such channel defects andimpurities can cause scattering of carriers flowing through the FinFETchannel, thus degrading channel mobility and adversely affecting deviceperformance. Dopant implantation through FinFET fins may also result ina non-uniform doping profile, which among other issues can causevariability of FinFET device parameters. Thus, existing techniques havenot proved entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flow chart of a method of fabricating a FinFET device orportion thereof according to one or more aspects of the presentdisclosure;

FIGS. 2A, 3, 4A, 5A, 6A, 7A, 8, 9, 10A, 11A, 12A, 13A, and 14-18 areisometric views of an embodiment of a device 200 according to aspects ofthe method of FIG. 1; and

FIGS. 2B, 4B, 5B, 6B, 7B, 10B, 11B, 12B, and 13B are cross-sectionviews, corresponding to respective isometric views listed above, of anembodiment of the device 200 according to aspects of the method of FIG.1.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

It is also noted that the present disclosure presents embodiments in theform of multi-gate transistors or fin-type multi-gate transistorsreferred to herein as FinFET devices. Such a device may include a P-typemetal-oxide-semiconductor FinFET device or an N-typemetal-oxide-semiconductor FinFET device. The FinFET device may be adual-gate device, tri-gate device, bulk device, silicon-on-insulator(SOI) device, and/or other configuration. One of ordinary skill mayrecognize other examples of semiconductor devices that may benefit fromaspects of the present disclosure. For example, some embodiments asdescribed herein may also be applied to gate-all-around (GAA) devices,Omega-gate (Ω-gate) devices, or Pi-gate (H-gate) devices.

Illustrated in FIG. 1 is a method 100 of semiconductor fabricationincluding fabrication of fins having dopant-free channels disposed on asubstrate. As used herein, the term “dopant-free” material is used todescribe a material (e.g., a semiconductor material) having an extrinsicdopant concentration from about 0 cm⁻³ to about 1×10¹⁷ cm⁻³. In someexamples, as used herein, the term “undoped” may be used interchangeablywith “dopant-free”, having a similar meaning. In addition, in someembodiments, the terms “undoped” and “dopant-free”, as used herein, mayrefer to substrate regions, fin regions, or other regions that are notpurposefully doped (e.g., by an ion implantation process, diffusionprocess, or other doping process). As discussed below, the presence ofdopants in a device channel may cause carrier scattering in the activedevice channel, which can substantially degrade device performance.Devices, such as FinFET devices, having a substantially dopant-freeepitaxially grown undoped channel region, as described below, may resultin significantly improved device performance (e.g., increased deviceON-current). A “dopant” or “extrinsic dopant”, as used herein, is usedto describe an impurity (e.g., B, P, As, etc.) that can be introducedinto a semiconductor lattice for the purpose of changing the electricalproperties of the semiconductor. For example, N-type impurities may beintroduced into a semiconductor to form an N-type material, and P-typeimpurities may be introduced into a semiconductor to form a P-typematerial. It is understood that the method 100 includes steps havingfeatures of a complementary metal-oxide-semiconductor (CMOS) technologyprocess flow and thus, are only described briefly herein. Additionalsteps may be performed before, after, and/or during the method 100.

FIGS. 2A, 3, 4A, 5A, 6A, 7A, 8, 9, 10A, 11A, 12A, 13A, and 14-18 areisometric views of an embodiment of a semiconductor device 200 accordingto various stages of the method 100 of FIG. 1. FIGS. 2B, 4B, 5B, 6B, 7B,10B, 11B, 12B, and 13B are cross-section views, corresponding torespective isometric views listed above, of an embodiment of thesemiconductor device 200 according to various stages of the method 100of FIG. 1. It is understood that parts of the semiconductor device 200may be fabricated by a CMOS technology process flow, and thus someprocesses are only briefly described herein. Further, the semiconductordevice 200 may include various other devices and features, such as othertypes of devices such as additional transistors, bipolar junctiontransistors, resistors, capacitors, inductors, diodes, fuses, staticrandom access memory (SRAM) and/or other logic circuits, etc., but issimplified for a better understanding of the inventive concepts of thepresent disclosure. In some embodiments, the semiconductor device 200includes a plurality of semiconductor devices (e.g., transistors),including PFETs, NFETs, etc., which may be interconnected. Moreover, itis noted that the process steps of method 100, including anydescriptions given with reference to FIGS. 2-18, are merely exemplaryand are not intended to be limiting beyond what is specifically recitedin the claims that follow.

The method 100 begins at block 102 where a substrate is provided.Referring to the example of FIG. 2, in an embodiment of block 102, asubstrate 202 is provided. In some embodiments, the substrate 202 may bea semiconductor substrate such as a silicon substrate. The substrate 202may include various layers, including conductive or insulating layersformed on a semiconductor substrate. The substrate 202 may includevarious doping configurations depending on design requirements as isknown in the art. The substrate 202 may also include othersemiconductors such as germanium, silicon carbide (SiC), silicongermanium (SiGe), or diamond. Alternatively, the substrate 202 mayinclude a compound semiconductor and/or an alloy semiconductor. Further,the substrate 202 may optionally include an epitaxial layer (epi-layer),may be strained for performance enhancement, may include asilicon-on-insulator (SOI) structure, and/or have other suitableenhancement features.

The method 100 then proceeds to block 104 where an APT implant isperformed. Referring to the example of FIGS. 2A and 2B, an embodiment ofblock 104 is shown. In some embodiments, a first photolithography(photo) step is performed to pattern a P-type APT region 206 and asecond photo step is performed to pattern an N-type APT region 204. Forexample, in some embodiments, performing the first photo step mayinclude forming a photoresist layer (resist) over the substrate 202,exposing the resist to a pattern (e.g., P-type APT implant mask),performing post-exposure bake processes, and developing the resist toform a patterned resist layer 208. As shown in FIG. 2A, after formationof the patterned resist layer 208, an ion implantation process 212 isperformed into the P-type APT region 206 of the substrate 202, while theN-type APT region 204 remains masked by the resist layer 208. By way ofexample, a P-type dopant implanted via the ion implantation process 212into the P-type APT region 206 may include boron, aluminum, gallium,indium, or other P-type acceptor material. After the ion implantationprocess 212, the resist layer 208 may be removed, for example, by way ofa solvent, resist stripper, ashing, or other suitable technique.Thereafter, in some embodiments, the second photo step may be performed,where the second photo step may include forming a resist layer over thesubstrate 202, exposing the resist to a pattern (e.g., N-type APTimplant mask), performing post-exposure bake processes, and developingthe resist to form a patterned resist layer 210. As shown in FIG. 2B,after formation of the patterned resist layer 210, an ion implantationprocess 214 is performed into the N-type APT region 204 of the substrate202, while the P-type APT region 206 remains masked by the resist layer210. By way of example, an N-type dopant implanted via the ionimplantation process 214 into the N-type APT region 204 may includearsenic, phosphorous, antimony, or other N-type donor material. Afterthe ion implantation process 214, the resist layer 210 may be removed,for example, by way of a solvent, resist stripper, ashing, or othersuitable technique. It will be understood that the first and secondphoto steps may be performed in any order, for example, the N-type APTregion 204 may be implanted before the P-type APT region 206.Additionally, in various embodiments, an APT implant may have a highdopant concentration, for example, of between about 1×10¹⁸ cm⁻³ and1×10¹⁹ cm⁻³. Such a high APT dopant concentration may be advantageouslyused, as described below, because of the presence of a subsequentlyformed dielectric layer over the APT-implanted substrate, which servesas a dopant diffusion barrier.

By performing the APT implant processes 212, 214 prior to formation ofFinFET fin structures, FinFET fin damage and device degradation can beavoided. For example, in existing semiconductor process flows, ionimplantation processes (e.g., APT ion implant processes) are performedthrough FinFET fin elements, described below, which can result in damageto the fin elements, including damage to a FinFET channel region, whichcan lead to carrier scattering and thus degrade device performance.Although a high temperature anneal may be used in an attempt to removesuch defects (as well as for dopant activation), all defects introducedby ion implantation may not be removed and the substrate (or finelements) may thus not be fully restored to its pre-ion implantcondition. In addition, dopant implantation through FinFET fin elementsmay result in a non-uniform doping profile that includes dopantsdistributed within the FinFET channel region. As known in the art,increased doping concentrations in a device channel can lead todecreased device mobility due to ionized impurity scattering.

Embodiments of the present disclosure offer advantages over the existingart, though it is understood that other embodiments may offer differentadvantages, not all advantages are necessarily discussed herein, and noparticular advantage is required for all embodiments. For example,embodiments discussed herein include methods and structures for avoidingdegradation to semiconductor devices that can occur due to ionimplantation processes, such as APT ion implantation processes,including defect formation and the introduction of channel impurities.In some embodiments, an N-type APT region 204 and/or P-type APT region206 are implanted, as described above, prior to formation of FinFET finelements, as described below. Thus, APT ion implant induced degradationis avoided. In some embodiments, an epitaxially grown undoped channellayer is formed over the APT-implanted substrate, as described below.Moreover, in various embodiments, the epitaxially grown undoped channellayer is separated from the APT-implanted substrate by an oxide layer,which serves as a diffusion barrier to APT dopants. Because of thisadvantageous oxide barrier layer, the APT implant may have a high dopantconcentration, for example, of between about 1×10¹⁸ cm⁻³ and 1×10¹⁹cm⁻³. In some embodiments, because the epitaxially grown undoped channellayer is substantially free of dopants, carrier channel scattering ismitigated, and device mobility and drive current are improved. Invarious embodiments, the undoped channel layer (and thus the activedevice channel) has a dopant concentration of less than about 1×10¹⁷cm⁻³. In some processes which include an oxidized SiGe layer as thediffusion barrier, the SiGe layer may not be fully oxidized, resultingin Ge residue which can be detrimental to device performance. Thus,embodiments of the present disclosure further provide methods for fullyoxidizing the SiGe layer, as well as reducing and/or eliminating such Geresidue without a penalty on a FinFET height or width, as describedbelow. In addition, it is noted that the methods and structuresdescribed herein may be applied to NFET or PFET devices. Further, whilethe discussion herein is directly primarily to FinFET devices, one ofordinary skill in the art in possession of this disclosure willappreciate that the methods and structures described herein may beequally applicable to other types of devices without departing from thescope of the present disclosure. Moreover, other embodiments andadvantages will be evident to those skilled in the art upon reading thepresent disclosure.

Returning to FIG. 1, the method 100 then proceeds to block 106 where oneor more epitaxial layers are grown. With reference to the example ofFIG. 3, in an embodiment of block 106, an epitaxial layer 302 is formedover the APT-implanted substrate 202, and an epitaxial layer 304 isformed over the epitaxial layer 302. In some embodiments, the epitaxiallayer 302 has a thickness range of about 2-10 nm. In some embodiments,the epitaxial layer 304 has a thickness range of about 30-60 nm. By wayof example, epitaxial growth of the layers 302, 304 may be performed bya molecular beam epitaxy (MBE) process, a metalorganic chemical vapordeposition (MOCVD) process, and/or other suitable epitaxial growthprocess. In some embodiments, the epitaxially grown layers 302, 304include the same material as the substrate 202. In some embodiments, theepitaxially grown layers 302, 304 include a different material than thesubstrate 202. In at least some examples, the epitaxial layer 302includes an epitaxially grown silicon germanium (SiGe) layer and theepitaxial layer 304 includes an epitaxially grown silicon (Si) layer.Alternatively, in some embodiments, either of the epitaxial layers 302,304 may include other materials such as germanium, a compoundsemiconductor such as silicon carbide, gallium arsenide, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide,an alloy semiconductor such as SiGe, GaAsP, AnnAs, AlGaAs, InGaAs,GaInP, and/or GaInAsP, or combinations thereof. In various embodiments,the epitaxial layers 302, 304 are substantially dopant-free (i.e.,having an extrinsic dopant concentration from about 0 cm⁻³ to about1×10¹⁷ cm⁻³), where for example, no intentional doping is performedduring the epitaxial growth process. As described in more detail below,the epitaxially grown undoped epitaxial layer 304 may serve as a channelregion for a subsequently-formed FinFET device. Thus, carrier scatteringthrough the FinFET channel will be substantially reduced for FinFETdevices including the substantially dopant-free epitaxially grownundoped epitaxial layer 304 described herein.

In various embodiments the epitaxial layer 302 has a first oxidationrate, and the epitaxial layer 304 has a second oxidation rate less thanthe first oxidation rate. For example, in embodiments where theepitaxial layer 302 includes SiGe and where the epitaxial layer 304includes Si, the Si oxidation rate of the epitaxial layer 304 is lessthan the SiGe oxidation rate of the epitaxial layer 302. During asubsequent oxidation process (after formation of FinFET fin elements),as discussed below, the portions of the fin elements including theepitaxial layer 302 may be fully oxidized, while only sidewalls of finelements including the epitaxial layer 304 may be oxidized. In someembodiments, the fully oxidized portions of the fin elements includingthe epitaxial layer 302 serve as a diffusion barrier to APT dopantspreviously implanted into the substrate 202, for example, so that theAPT dopants will not diffuse into a subsequently formed FinFET channel.Also, in some embodiments, the sidewall oxidation of fin elementsincluding the epitaxial layer 304 serves to fine tune a shape of the finelements which form a FinFET channel.

As also shown in the example of FIG. 3, a hard mask (HM) layer 306 maybe formed over the epitaxial layer 304. In some embodiments, the HMlayer 306 includes an oxide layer 308 (e.g., a pad oxide layer that mayinclude SiO₂) and nitride layer 310 (e.g., a pad nitride layer that mayinclude Si₃N₄) formed over the oxide layer 308. In some examples, theoxide layer 308 may include thermally grown oxide, CVD-deposited oxide,and/or ALD-deposited oxide, and the nitride layer 310 may include anitride layer deposited by CVD or other suitable technique. By way ofexample, the oxide layer 308 may have a thickness of betweenapproximately 5 nm and approximately 40 nm. In some embodiments, thenitride layer 310 may have a thickness of between approximately 20 nmand approximately 160 nm.

The method 100 then proceeds to block 108 where fin elements, used forsubsequent FinFET formation, are formed. With reference to the exampleof FIGS. 4A and 4B, in an embodiment of block 108, a plurality of finelements 402 extending from the substrate 202 are formed. In variousembodiments, each of the fin elements 402 includes a substrate portion202A formed from the substrate 202, a first epitaxial layer portion 302Aformed from the epitaxial layer 302, a second epitaxial layer portion304A formed from the epitaxial layer 304, and an HM layer portion 306A(including an oxide layer portion 308A and a nitride layer portion 310A)formed from the HM layer 306.

The fins 402, like the substrate 202, may include silicon or anotherelementary semiconductor, such as germanium; a compound semiconductorincluding silicon carbide, gallium arsenide, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide; an alloysemiconductor including SiGe, GaAsP, AlInAs, AlGaAs, InGaAs, GaInP,and/or GaInAsP; or combinations thereof. The fins 402 may be fabricatedusing suitable processes including photolithography and etch processes.The photolithography process may include forming a photoresist layerover the substrate 202 (e.g., over the HM layer 306 of FIG. 3), exposingthe resist to a pattern, performing post-exposure bake processes, anddeveloping the resist to form a masking element including the resist. Insome embodiments, pattering the resist to form the masking element maybe performed using an electron beam (e-beam) lithography process. Themasking element may then be used to protect regions of the substrate202, and layers formed thereupon, while an etch process forms trenches404 in unprotected regions through the HM layer 306, through theepitaxial layers 302, 304, and into the substrate 202, thereby leavingthe plurality of extending fins 402. The trenches 404 may be etchedusing a dry etch (e.g., reactive ion etching), a wet etch, and/or othersuitable processes. Numerous other embodiments of methods to form thefins on the substrate may also be used. As described in more detailbelow, and in some embodiments, the second epitaxial layer portion 304Awill serve as a FinFET device channel. Moreover, because the secondepitaxial layer portion 304A is undoped, and remains undoped throughoutdevice fabrication as discussed below, the FinFET channel region thusremains substantially free of dopants. Therefore, in accordance withembodiments of the present disclosure, FinFET carrier channel scatteringis mitigated, and device mobility and drive current are improved.

As shown in FIGS. 4A and 4B, sidewalls of the fins 402, in particularthe second epitaxial layer portion 304A, are substantially vertical. Invarious embodiments, such a vertical fin profile results in improvedFinFET device performance. In some cases, formation of the fins 402 mayinitially result in fins 402 having a tapered profile. However, in someembodiments, a subsequently performed oxidation process, as describedbelow, may be used to tune the profile of the fins 402 and thus create amore vertical sidewall.

The method 100 then proceeds to block 110 where a trim process isperformed. With reference to the example of FIGS. 4A/5A and 4B/5B, in anembodiment of block 110, the first epitaxial layer portion 302A istrimmed to form a trimmed epitaxial layer portion 302B. In variousembodiments, formation of the trimmed epitaxial layer portion 302Bensures that the epitaxial layer portion 302B becomes fully oxidizedduring a subsequent oxidation process, as described below. For example,in embodiments where the epitaxial layer 302 includes SiGe, the trimmedepitaxial layer portion 302B may likewise include SiGe. Thus, during asubsequent oxidation process, such a SiGe trimmed epitaxial layerportion 302B will become fully oxidized. In some embodiments, a trimmingprocess used to form the trimmed epitaxial layer portion 302B includesan etching process such as a wet etching process. By way of example,etchants used for the trimming process may include a mixture of sulfuricacid (H₂SO₄) and hydrogen peroxide (H₂O₂) (known as a sulfuric peroxidemixture (SPM)), a mixture of ammonium hydroxide (NH₄OH), H₂O₂, and water(H₂O) (known as an ammonia-peroxide mixture (APM)), a mixture of NH₄OHand H₂O₂, H₂O₂, and/or other etchants as known in the art.Alternatively, in some embodiments, the trimming process may include adry etching process or a combination of a dry/wet etching process.

The method 100 then proceeds to block 112 where an oxidation process isperformed. With reference to the example of FIGS. 5A/6A and 5B/6B, in anembodiment of block 112, the device 200 is exposed to an oxidationprocess that fully oxidizes the trimmed epitaxial layer portion 302B ofeach of the plurality of fin elements 402, resulting in oxidized layer302C. In some embodiments, the oxidized layer 302C (e.g., which mayinclude a SiGe oxide layer) has a thickness range of about 5-20 nm Invarious embodiments, the oxidation process may also form an oxide layer602 over one or more of the substrate 202, the substrate portion 202A,the second epitaxial layer portion 304A, and the HM layer portion 306A.In some examples, the oxidation process may be performed by exposing thedevice 200 to a wet oxidation process, a dry oxidation process, or acombination thereof. In at least some embodiments, the device 200 isexposed to a wet oxidation process using water vapor or steam as theoxidant, at a pressure of about 1 ATM, within a temperature range ofabout 400-600° C., and for a time from about 0.5-2 hours. It is notedthat the oxidation process conditions provided herein are merelyexemplary, and are not meant to be limiting in any way. As illustratedin FIGS. 6A/6B, the oxidation process may also oxidize sidewalls 304SWof the second epitaxial layer portion 304A (e.g., rather than theentirety of the second epitaxial layer portion 304A). In someembodiments, oxidation of the sidewalls 304SW may provide for tuning ofthe profile of the fins 402, for example, by reducing and/or otherwiseadjusting fin 402 profile tapering which may have been previouslypresent in the fins 402 (e.g., after formation of the fin elements atblock 108).

As described above, in some embodiments, the first epitaxial layerportion 302A (and thus the trimmed epitaxial layer portion 302B) mayinclude a material having a first oxidation rate, and the secondepitaxial layer portion 304A may include a material having a secondoxidation rate less than the first oxidation rate. By way of example, inembodiments where the first epitaxial layer portion 302A (and thus thetrimmed epitaxial layer portion 302B) includes SiGe, and where thesecond epitaxial layer portion 304A includes Si, the faster SiGeoxidation rate (i.e., as compared to Si) ensures that the SiGe layer(i.e., the trimmed epitaxial layer portion 302B) becomes fully oxidized(i.e., oxidized layer 302C) while only a sidewall portion of the Silayer (i.e., the second epitaxial layer portion 304A) is oxidized. Itwill be understood that any of the plurality of materials discussedabove may be selected for each of the first and second epitaxial layerportions 302A, 304A, as long as the oxidation rate of the secondepitaxial layer portion 304A is less than the oxidation rate of thefirst epitaxial layer portion 302A (and thus less than the oxidationrate of the trimmed epitaxial layer portion 302B). In this manner, thefully oxidized layer 302C of each of the fin elements 402 serves as adiffusion barrier to APT dopants previously implanted into the substrate202, and which may be present in the substrate portion 202A directlybelow the oxidized layer 302C. Thus, in various embodiments, theoxidized layer 302C serves to prevent APT dopants within the substrateportion 202A from diffusing into the second epitaxial layer portion304A, which serves as a channel region for a subsequently formed FinFETdevice. Additionally, in some embodiments, by tuning oxidation of thesidewall 304SW of the second epitaxial layer portion 304A, the profileof the fins 402 may also be tuned. It will further be understood bythose skilled in the art that the oxidation process conditions may bechosen so as to tune the fin 402 shape to any of a plurality of profilesas may be desirable for a given device design, process technology, orother process conditions.

Returning to the discussion of oxidation of the trimmed epitaxial layerportion 302B, wherein the trimmed epitaxial layer portion 302 includesSiGe, it is noted that the oxidation of Ge is relatively more difficultas compared to Si within a given layer of SiGe. Thus, during theoxidation process as described above, a portion of material (e.g., Ge)from the trimmed epitaxial layer portion 302B may diffuse into one orboth of the second epitaxial layer portion 304A and the substrateportion 202A, resulting in a residual material portion 302R. In variousembodiments, the residual material portion 302R includes non-oxidized Geresidue and/or Ge which has been only partially oxidized. In variousexamples, such residual Ge of the residual material portion 302R (andparticularly residual Ge of the residual material portion 302R withinthe second epitaxial layer portion 304A) may present a reliabilityconcern for subsequently fabricated FinFET devices. Thus, it isdesirable to remove the residual Ge of the residual material portion302R, particularly within the second epitaxial layer portion 304A, asthe second epitaxial layer portion 304A will serve as the device channelfor a subsequently fabricated device. Thereby, as described below,embodiments of the present disclosure provide methods for removal ofsuch Ge residue, without sacrificing a fin 402 height and/or a fin 402width, while also serving to improve FinFET device performance.

The method 100 then proceeds to block 114 where an oxide etching processis performed. In an embodiment of block 114, the device 200 may beexposed to an etching process that serves to remove the oxide layer 602from over the one or more of the substrate 202, the substrate portion202A, the second epitaxial layer portion 304A (e.g., from the sidewalls304SW), and the HM layer portion 306A. In some embodiments, the etchingprocess may also remove a portion of the oxidized layer 302C. In someembodiments, the oxide etching process includes an wet etching process,where the etchant used for the wet etching process may include a dilutemixture of hydrofluoric acid (HF) (e.g., 49% HF in H₂O by weight) andde-ionized (DI) H₂O, where the HF:H₂O ratio is approximately 1:50,approximately 1:100, or other suitable ratio. Alternatively, in someembodiments, the etching process may include a dry etching process or acombination of a dry/wet etching process.

The method 100 then proceeds to block 116 where a liner layer isdeposited and annealed. With reference to the example of FIGS. 6A/7A and6B/7B, after removal of the oxide layer 602 by the oxide etching processof block 114 and in an embodiment of block 116, a liner layer 702 maythen be deposited over the device 200 and into the trenches 404. In someembodiments, the liner layer 702 includes silicon nitride deposited byCVD or other suitable technique. In some examples, the liner layer 702may include another material such as silicon oxynitride, aluminum oxide(Al₂O₃), aluminum nitride (AlN), aluminum oxynitride (AlON), and/orother another suitable material as known in the art. In variousembodiments, the material selected for the liner layer 702 includes amaterial that may be readily removed by a wet etching process. In someexamples, the material selected for the liner layer 702 includes amaterial that has an oxygen-blocking capability (e.g., oxygen-blockingduring an anneal process). In some embodiments, because the oxide layer602 was fully removed at block 114, the deposited liner layer 702 maydirectly contact at least the second epitaxial layer portion 304A, theoxidized layer 302C, and the substrate portion 202A, as shown in FIGS.7A/7B. By way of example, the liner layer 702 may have a thickness ofbetween approximately 3 nm and approximately 8 nm. In some embodiments,after formation of the liner layer 702, the device 200 may be subjectedto an anneal process to remove defects from and improve the quality ofthe liner layer 702. For example, in some embodiments, the liner layer702 may be annealed at a temperature from about 750° C.-1050° C. for atime of about 30 s-30 min. In various embodiments, the liner layer maybe annealed at a pressure of about 1 ATM, and in some cases, in anitrogen (N₂) ambient.

The method 100 then proceeds to block 118 where isolation regions areformed. With reference to the example of FIGS. 7A/7B, 8, and 9, in anembodiment of block 118, a plurality of isolation regions 902 (FIG. 9)are formed. In some embodiments, the plurality of isolation regions 902may include a plurality of shallow trench isolation (STI) features. Byway of example, in some embodiments, a dielectric layer 802 (FIG. 8) isfirst deposited over the substrate 202, filling the trenches 404 withthe dielectric layer 802. In some embodiments, the dielectric layer 802may include SiO₂, silicon nitride, silicon oxynitride, fluorine-dopedsilicate glass (FSG), a low-k dielectric, combinations thereof, and/orother suitable materials known in the art. In various examples, thedielectric layer 802 may be deposited by a CVD process, a subatmosphericCVD (SACVD) process, a flowable CVD process, an ALD process, a PVDprocess, or other suitable process. In some embodiments, afterdeposition of the dielectric layer 802, the device 200 may be annealedto improve the quality of the dielectric layer 802. In some embodiments,a field oxide, a LOCOS feature, and/or other suitable isolation featuresmay additionally or alternatively be implemented on and/or within thesubstrate. However, other embodiments are possible. For example, in someembodiments, the dielectric layer 802 (and subsequently formed isolationregions 902) may include a multi-layer structure, for example, havingone or more liner layers. After deposition of the dielectric layer 802,the deposited dielectric layer 802 is thinned and planarized, forexample by a CMP process. With reference to FIG. 9, illustrated thereinis the device 200 at an intermediate processing stage where a CMPprocess has been performed to remove excess material of the dielectriclayer 802, planarize a top surface of the device 200, and thereby formthe isolation regions 902. In some embodiments, the isolation regions902 are configured to isolate fin active regions (e.g., the secondepitaxial layer portion 304A).

Referring to FIGS. 8 and 9, and in some embodiments, the CMP processused to planarize the top surface of the device 200 and form theisolation regions 902 may also serve to remove the HM layer portion 306Afrom each of the plurality of fin elements 402. In some embodiments,removal of the HM layer portion 306A includes removal of the oxide layerportion 308A and the nitride layer portion 310A. Removal of the HM layerportion 306A, including the oxide layer portion 308A and the nitridelayer portion 310A, may alternately be performed by using a suitableetching process (e.g., dry or wet etching). Whether by using a CMPprocess or an etching process, upon removal of the HM layer portion 306Afrom the top of each of the fin elements 402, the underlying secondepitaxial layer portion 304A of each of the fin elements 402 is exposed.

The method 100 then proceeds to block 120 where the isolation regionsare recessed. Referring to the examples of FIGS. 9 and 10A/10B, in anembodiment of block 120, the isolation regions 902 around the finelements 402 are recessed to laterally expose an upper portion 402A ofthe fin elements 402. In some embodiments, the recessing process mayinclude a dry etching process, a wet etching process, and/or acombination thereof. For example, the recessing process may include adry, plasma-free process using a reaction gas or reaction gascombination, such as HF+NH₃, NF3+NH₃, and/or other suitable reactiongases. In some embodiments, the dry, plasma-free recessing process isperformed using a CERTAS® Gas Chemical Etch System, available from TokyoElectron Limited, Tokyo, Japan. In some embodiments, the dry,plasma-free recessing process is performed using a SICONI® System,available from Applied Materials, Inc., Santa Clara, Calif. In someexamples, the recessing process may include a wet etch performed using adilute mixture of HF (e.g., 49% HF in H₂O by weight) and de-ionized (DI)H₂O, where the HF:H₂O ratio is approximately 1:50, approximately 1:100,or other suitable ratio.

In some embodiments, a recessing depth is controlled (e.g., bycontrolling an etching time) so as to result in a desired height ‘H’ ofthe exposed upper portion 402A of the fin elements 402. As shown in FIG.10B, each of the plurality of fins 402 include a height ‘H_(FIN)’ andwidth ‘W_(FIN)’, for example, defined at least in part during theformation of the fin elements at block 108. In some examples, the finheight ‘H_(FIN)’ may be between approximately 30 nm-60 nm (e.g., asdefined by the thickness of the epitaxial layer 304), and the fin width‘W_(FIN)’ may be between approximately 4 nm-10 nm (e.g., as definedduring the fin formation process of block 108). In various embodiments,the recessing depth of the isolation regions 902 is controlled to ensurethat a top surface 904 of the recessed isolation regions 902 ispositioned along a horizontal plane disposed above a horizontal plane402BP defined by a fin bottom surface 402B. In such embodimentstherefore, the height ‘H’ of the exposed upper portion 402A of the fins402 may be less than the fin height ‘H_(FIN)’ (e.g., less than betweenapproximately 30 nm-60 nm). In some embodiments, the recessing depth ofthe isolation regions 902 is controlled such that the top surface 904 ofthe recessed isolation regions 902 is positioned along a horizontalplane substantially co-planar with the horizontal plane 402BP defined bythe fin bottom surface 402B. In such embodiments therefore, the height‘H’ of the exposed upper portion 402A of the fins 402 may besubstantially equal to the fin height ‘H_(FIN)’ (e.g., substantiallyequal to between approximately 30 nm-60 nm). Thus, in general, the topsurface 904 of the recessed isolation regions 902 may be either alignedwith, or above, the plane 402BP defined by the fin bottom surface 402B.By controlling the height of the recessed isolation regions 902 asdescribed herein, undesirable parasitic capacitances may be avoided.Moreover, reduction and/or avoidance of such parasitic capacitancesavoids costly AC device performance penalties (e.g., due to increased RCdelay times).

The method 100 then proceeds to block 122 where the liner layer isetched. Referring to the examples of FIGS. 10A/10B and 11A/11B, in anembodiment of block 122, the liner layer 702 is etched to expose theresidual Ge of the residual material portion 302R within the secondepitaxial layer portion 304A. In some embodiments, the process used toetch the liner layer 702 may include a wet etching process, a dryetching process, and/or a combination thereof. In some embodiments, theliner layer 702 may be etched using a wet etch performed using heatedphosphoric acid (H₃PO₃). However, in some embodiments, other wet and/ordry etchants may be used to etch the liner layer 702 without departingfrom the scope of the present disclosure. Additionally, in someembodiments, the etching process (e.g., of the liner layer 702) mayinclude an over-etching process, which may result in voids 1102 adjacentto the second epitaxial layer portion 304A that expose the residual Geof the residual material portion 302R within the second epitaxial layerportion 304A. In some embodiments, the over-etching process may alsoexpose at least portions of the fin bottom surface 402B. In someembodiments, the liner layer 702 may be over-etched by around 2 nm-6 nm.In some examples, the over-etching process may further include anetchant that etches the oxidized layer 302C, thereby exposing even moreof the fin bottom surface 402B. In some cases, the oxidized layer 302Cmay be etched using the same etchant as that which is used to etch theliner layer 702. In some embodiments, the oxidized layer 302C may beetched using a different etchant than that which is used to etch theliner layer 702. In some examples, the etchant is a selective etchantthat only etches the liner layer 702 without etching the oxidized layer302C. Thus, after the liner layer 702 is etched, the residual Ge of theresidual material portion 302R within the second epitaxial layer portion304A is exposed and may be subsequently removed.

It is noted that in at least some existing solutions, in order to exposesuch residual Ge of the residual material portion 302R (e.g., within thesecond epitaxial layer portion 304A), the isolation regions 902 wouldhave to be recessed such that the top surface 904 of the recessedisolation regions 902 would be below the plane 402BP defined by the finbottom surface 402B (FIG. 10B). This would lead to an AC performancepenalty for subsequently fabricated devices due to the introduction ofadditional parasitic capacitance, as discussed above. Alternatively, byformation of the liner layer 702 prior to formation of the isolationregions 902, embodiments of the present disclosure advantageously avoidsuch issues. In particular, as described above, embodiments of thepresent disclosure including the liner layer 702 ensure that the topsurface 904 of the recessed isolation regions 902 remain eithersubstantially aligned with, or above, the plane 402BP defined by the finbottom surface 402B (avoiding costly AC performance penalties), whilealso providing for exposure of the residual Ge of the residual materialportion 302R, which is at and/or adjacent to the fin bottom surface402B, upon etching and/or over-etching of the liner layer 702.

The method 100 then proceeds to block 124 where the residual Ge iscleaned. Referring to the examples of FIGS. 11A/11B and 12A/12B, in anembodiment of block 124, the residual Ge exposed by the liner layer 702etching process of block 122 may be removed. In some embodiments, theprocess used to clean the Ge residue may include a wet etching process,a dry etching process, and/or a combination thereof. In someembodiments, the exposed Ge residue may be cleaned (i.e., etched and orotherwise removed) using a wet etch performed using a mixture ofsulfuric acid (H₂SO₄) and hydrogen peroxide (H₂O₂) (known as a sulfuricperoxide mixture (SPM)), a mixture of ammonium hydroxide (NH₄OH), H₂O₂,and water (H₂O) (known as an ammonia-peroxide mixture (APM)), a mixtureof NH₄OH and H₂O₂, H₂O₂, and/or other etchants as known in the art.Additionally, in some embodiments and at least in part due to theover-etching performed at block 122, residual Ge may be removed from theresidual material portion 302R as well as from at least part of the finbottom surface 402B. Thus, cleaning the residual Ge, in accordance withthe embodiments described herein, improves performance of subsequentlyfabricated FinFET devices.

The method 100 then proceeds to block 126 where a dummy gate stack isformed. With reference first to the example of FIGS. 13A/13B, in anembodiment of block 126, a dielectric layer 1302 may be formed. In someembodiments, the dielectric layer 1302 is deposited over the substrate202 and over the fins 402, including within trenches between adjacentfins 402. In some embodiments, the dielectric layer 1302 may includeSiO₂, silicon nitride, a high-K dielectric material or other suitablematerial. In various examples, the dielectric layer 1302 may bedeposited by a CVD process, a subatmospheric CVD (SACVD) process, aflowable CVD process, an ALD process, a PVD process, or other suitableprocess. By way of example, the dielectric layer 1302 may be used toprevent damage to the fin elements 402 by subsequent processing (e.g.,subsequent formation of the dummy gate stack).

Referring now to the example of FIG. 14, in a further embodiment ofblock 126, processing of the dummy gate stack continues. For example, insome embodiments, a gate stack 1402 and sidewall spacers 1404 disposedon sidewalls of the gate stack 1402 are formed. In an embodiment, thegate stack 1402 is a dummy gate stack. However, in some embodiments ofthe method 100, the gate stack 1402 may be a high-K/metal gate stack.While the method 100 is described below with reference to a replacementgate process, those skilled in the art will readily appreciate that themethods and structures disclosed herein may equally apply to agate-first process. In some examples, a gate-first process includesformation of a gate stack prior to source/drain formation orsource/drain dopant activation. Merely by way of example, a gate-firstprocess may include gate dielectric and metal gate depositions, followedby a gate stack etch process to define a gate critical dimension (CD).In some embodiments of a gate-first process, gate stack formation may befollowed by source/drain formation including doping of source/drainregions and, in some examples, annealing for source/drain dopantactivation.

In some embodiments using a gate-last process, the gate stack 1402 is adummy gate stack and will be replaced by the final gate stack at asubsequent processing stage of the device 200. In particular, the gatestack 1402 may be replaced at a later processing stage by a high-Kdielectric layer (HK) and metal gate electrode (MG). In someembodiments, the gate stack 1402 is formed over the substrate 202 and isat least partially disposed over the fin elements 402. Additionally, invarious embodiments, the gate stack 1402 is formed over the dielectriclayer 1302, which was deposited as described above prior to formation ofthe gate stack 1402. In some embodiments, the gate stack 1402 includes adielectric layer 1406, an electrode layer 1408, and a hard mask 1410which may include an oxide layer 1412 and a nitride layer 1414 formedover the oxide layer 1412. In some embodiments, the gate stack 1402 isformed by various process steps such as layer deposition, patterning,etching, as well as other suitable processing steps. In some examples,the layer deposition process includes CVD (including both low-pressureCVD and plasma-enhanced CVD), PVD, ALD, thermal oxidation, e-beamevaporation, or other suitable deposition techniques, or a combinationthereof. In some embodiments, the patterning process includes alithography process (e.g., photolithography or e-beam lithography) whichmay further include photoresist coating (e.g., spin-on coating), softbaking, mask aligning, exposure, post-exposure baking, photoresistdeveloping, rinsing, drying (e.g., spin-drying and/or hard baking),other suitable lithography techniques, and/or combinations thereof. Insome embodiments, the etching process may include dry etching (e.g., RIEetching), wet etching, and/or other etching methods.

In some embodiments, the dielectric layer 1406 of the gate stack 1402includes silicon oxide. Alternatively or additionally, the dielectriclayer 1406 of the gate stack 1402 may include silicon nitride, a high-Kdielectric material or other suitable material. In some embodiments, theelectrode layer 1408 of the gate stack 1402 may include polycrystallinesilicon (polysilicon). In some embodiments, the oxide layer 1412 of thehard mask 1410 includes a pad oxide layer that may include SiO₂. In someembodiments, the nitride layer 1414 of the hard mask 1410 includes a padnitride layer that may include Si₃N₄, silicon oxynitride or siliconcarbide.

In various embodiments, the sidewall spacers 1404 are disposed on thesidewalls of the gate stack 1402. The sidewall spacers 1404 may includea dielectric material such as silicon oxide, silicon nitride, siliconcarbide, silicon oxynitride, or combinations thereof. In someembodiments, the sidewall spacers 1404 include multiple layers, such asmain spacer walls, liner layers, and the like. By way of example, thesidewall spacers 1404 may be formed by depositing a dielectric materialover the gate stack 1402 and anisotropically etching back the dielectricmaterial. In some embodiments, the etch-back process (e.g., for spacerformation) may include a multiple-step etching process to improve etchselectivity and provide over-etch control. In some embodiments, prior toforming the sidewall spacers 1404, an ion implantation process may beperformed to form lightly-doped drain (LDD) features within thesemiconductor device 200. In other embodiments, such LDD features may beformed by epitaxial growth of an in-situ doped layer prior to formingthe sidewall spacers 1404. In some embodiments, a plasma doping (PLAD)process may be used to form the LDD features. In yet other embodiments,an ion implantation process may be performed after forming the sidewallspacers 1404 to form the LDD features. In some embodiments, afterformation of the LDD features, the semiconductor device 200 may besubject to a high thermal budget process (anneal) to remove defects andactivate dopants (i.e., to place dopants into substitutional sites). Itshould be noted that in accordance with various embodiments, anypotential diffusion of APT dopants previously implanted and disposedwithin the substrate regions 202A (e.g., due to high thermal budgetprocessing), will be blocked from diffusing into the FinFET channelregions (i.e., the second epitaxial layer portion 304A) by the fullyoxidized layer 302C.

In some embodiments, still with reference to the example of FIG. 14,after formation of the dummy gate stack (e.g., the gate stack 1402), thedielectric layer 1302 may be etched-back to form dielectric regions1302A and thereby expose portions of the fin elements 402 not covered bythe gate stack 1402. In some embodiments, etching-back of the dielectriclayer 1302 may include a wet etch process, a dry etch process, amultiple-step etch process, and/or a combination thereof. Thus,preserving the dielectric layer 1302 during formation of the gate stack1402 serves to effectively protect the fin elements 402 during suchprocessing.

The method 100 then proceeds to block 128 where the fin elements areetched. Referring to the example of FIGS. 14 and 15, in an embodiment ofblock 128, portions of the fin elements 402 on either side of the gatestack 1402 (exposed by formation of the dielectric regions 1302A) may beetched. The etched portions of the fin elements 402 may include portionsof the fin elements 402 within source/drain regions 1502, 1504 on eitherside of the gate stack 1402. In some embodiments, the etching of theportions of the fin elements 402 may be performed using a dry etchingprocess, a wet etching process, and/or a combination thereof.Additionally, in some embodiments, portions of the oxide regions beneaththe etched portions of the fin elements 402, which may include oxidelayer 302C (e.g., bordered by the liner layer 702), are also etched. Insome embodiments, etching the oxide regions beneath the etched portionsof the fin elements 402 exposes the underlying substrate regions 202A.In various embodiments, the etching of the oxide regions (e.g., theoxide layer 302C) beneath the etched portions of the fin elements 402may be performed using a dry etching process, a wet etching process,and/or a combination thereof. It is noted that in the embodimentsdisclosed herein, the oxide layer 302C remains present beneath the gatestack 1402, serving to block diffusion of APT dopants from within thesubstrate regions 202A into the device channel region (i.e., the secondepitaxial layer portion 304A covered by the gate stack 1402).

The method 100 then proceeds to block 130 where source/drain featuresare formed. Referring to the example of FIGS. 15 and 16, in anembodiment of block 130, source/drain features 1602, 1604 are formed insource/drain regions 1502, 1504. In some embodiments, the source/drainfeatures 1602, 1604 are formed by epitaxially growing a semiconductormaterial layer in the source/drain regions 1502, 1504. In some examples,dummy sidewall spacers may be formed prior to epitaxial source/draingrowth and removed after epitaxial source/drain growth. Additionally, insome embodiments, the main sidewall spacers may be formed, as describedabove, after epitaxial source/drain growth. In various embodiments, thesemiconductor material layer grown in the source/drain regions 1502,1504 may include Ge, Si, GaAs, AlGaAs, SiGe, GaAsP, SiP, or othersuitable material. The source/drain features 1602, 1604 may be formed byone or more epitaxial (epi) processes. In some embodiments, thesource/drain features 1602, 1604 may be in-situ doped during the epiprocess. For example, in some embodiments, epitaxially grown SiGesource/drain features 1602, 1604 may be doped with boron. In someembodiments, epitaxially grown Si epi source/drain features 1602, 1604may be doped with carbon to form Si:C source/drain features, phosphorousto form Si:P source/drain features, or both carbon and phosphorous toform SiCP source/drain features. In some embodiments, the source/drainfeatures 1602, 1604 are not in-situ doped, and instead an implantationprocess is performed to dope the source/drain features 1602, 1604. Invarious embodiments, a doping dose used to dope the source/drainfeatures 1602, 1604 is greater than a doping dose used to dope the LDDfeatures. In some embodiments, formation of the source/drain features1602, 1604 may be performed in separate processing sequences for each ofN-type and P-type source/drain features 1602, 1604. In some embodiments,after formation of the source/drain features 1602, 1604, an epi annealprocess may be performed, where the semiconductor device 200 issubjected to a high thermal budget process. However, as described above,the oxide layer (e.g., the oxide layer 302C) which remains presentbeneath the gate stack 1402, will block any potential diffusion of APTdopants from within the substrate regions 202A into the device channelregion (i.e., the second epitaxial layer portion 304A covered by thegate stack 1402) during such high thermal budget processing.

The method 100 then proceeds to block 132 where an inter-layerdielectric (ILD) layer is formed and the dummy gate stack is removed.Referring to the example of FIGS. 16 and 17, in an embodiment of block132, an ILD layer 1702 is formed over the substrate 202. In someembodiments, a contact etch stop layer (CESL) is formed over thesubstrate 202 prior to forming the ILD layer 1702. In some examples, theCESL includes a silicon nitride layer, silicon oxide layer, a siliconoxynitride layer, and/or other materials known in the art. The CESL maybe formed by plasma-enhanced chemical vapor deposition (PECVD) processand/or other suitable deposition or oxidation processes. In someembodiments, the ILD layer 1702 includes materials such astetraethylorthosilicate (TEOS) oxide, un-doped silicate glass, or dopedsilicon oxide such as borophosphosilicate glass (BPSG), fused silicaglass (FSG), phosphosilicate glass (PSG), boron doped silicon glass(BSG), and/or other suitable dielectric materials. The ILD layer 1702may be deposited by a PECVD process or other suitable depositiontechnique. In some embodiments, after formation of the ILD layer 1702,the semiconductor device 200 may be subject to a high thermal budgetprocess to anneal the ILD layer. As described above, the oxide layer(e.g., the oxide layer 302C) blocks any potential diffusion of APTdopants from within the substrate regions 202A into the device channelregion during such high thermal budget processing. In some examples, aplanarization process may be performed to expose a top surface of thedummy gate stack 1402. For example, a planarization process includes achemical mechanical planarization (CMP) process which removes portionsof the ILD layer 1702 (and CESL layer, if present) overlying the dummygate stack 1402 and planarizes a top surface of the semiconductor device200. In addition, the CMP process may remove the hard mask 1410overlying the dummy gate stack 1402 to expose the electrode layer 1408,such as a polysilicon electrode layer. Thereafter, in some embodiments,the remaining previously formed dummy gate stack 1402 features (e.g.,the dielectric layer 1406 and the electrode layer 1408) may be removedfrom the substrate. In some embodiments, the electrode layer 1408 may beremoved while the dielectric layer 1406 is not removed. The removal ofthe electrode layer 1408 (or the electrode layer 1408 and dielectriclayer 1406) from the gate stack 1402 may result in a trench 1704, and afinal gate structure (e.g., including a high-K dielectric layer andmetal gate electrode) may be subsequently formed in the trench 1704, asdescribed below. The removal of the dummy gate stack features may beperformed using a selective etch process such as a selective wet etch, aselective dry etch, or a combination thereof.

The method 100 then proceeds to block 134 where a high-K/metal gatestack is formed. Referring to the example of FIGS. 17 and 18, in anembodiment of block 134, a high-K/metal gate stack 1802 is formed withinthe trench 1704 of the device 200. In various embodiments, thehigh-K/metal gate stack includes an interfacial layer formed over thesubstantially dopant-free channel material of the fin (i.e., the secondepitaxial layer portion 304A), a high-K gate dielectric layer formedover the interfacial layer, and a metal layer formed over the high-Kgate dielectric layer. High-K gate dielectrics, as used and describedherein, include dielectric materials having a high dielectric constant,for example, greater than that of thermal silicon oxide (˜3.9). Themetal layer used within high-K/metal gate stack may include a metal,metal alloy, or metal silicide. Additionally, the formation of thehigh-K/metal gate stack may include depositions to form various gatematerials, one or more liner layers, and one or more CMP processes toremove excessive gate materials and thereby planarize a top surface ofthe semiconductor device 200.

In some embodiments, the interfacial layer of the high-K/metal gatestack 1802 may include a dielectric material such as silicon oxide(SiO₂), HfSiO, or silicon oxynitride (SiON). The interfacial layer maybe formed by chemical oxidation, thermal oxidation, atomic layerdeposition (ALD), chemical vapor deposition (CVD), and/or other suitablemethod. The gate dielectric layer of the high-K/metal gate stack 1802may include a high-K dielectric layer such as hafnium oxide (HfO₂).Alternatively, the gate dielectric layer of the high-K/metal gate stack1802 may include other high-K dielectrics, such as TiO₂, HfZrO, Ta₂O₃,HfSiO₄, ZrO₂, ZrSiO₂, LaO, AlO, ZrO, TiO, Ta₂O₅, Y₂O₃, SrTiO₃ (STO),BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO, HfSiO, LaSiO, AlSiO, HfTaO, HfTiO,(Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄, oxynitrides (SiON), combinationsthereof, or other suitable material. The high-K gate dielectric layermay be formed by ALD, physical vapor deposition (PVD), CVD, oxidation,and/or other suitable methods. The metal layer of the high-K/metal gatestack 1802 may include a single layer or alternatively a multi-layerstructure, such as various combinations of a metal layer with a selectedwork function to enhance the device performance (work function metallayer), a liner layer, a wetting layer, an adhesion layer, a metal alloyor a metal silicide. By way of example, the metal layer of thehigh-K/metal gate stack 1802 may include Ti, Ag, Al, TiAlN, TaC, TaCN,TaSiN, Mn, Zr, TiN, TaN, Ru, Mo, Al, WN, Cu, W, Re, Jr, Co, Ni, othersuitable metal materials or a combination thereof. In addition, themetal layer may provide an N-type or P-type work function, may serve asa transistor (e.g., FinFET) gate electrode, and in at least someembodiments, the metal layer of the high-K/metal gate stack 1802 mayinclude a polysilicon layer. In various embodiments, the metal layer ofthe high-K/metal gate stack 1802 may be formed by ALD, PVD, CVD, e-beamevaporation, or other suitable process. Further, the metal layer of thehigh-K/metal gate stack 1802 may be formed separately for N-FET andP-FET transistors which may use different metal layers. In variousembodiments, a CMP process may be performed to remove excessive metalfrom the metal layer of the high-K/metal gate stack 1802, and therebyprovide a substantially planar top surface of the metal layer of thehigh-K/metal gate stack 1802.

The semiconductor device 200 may undergo further processing to formvarious features and regions known in the art. For example, subsequentprocessing may form interlayer dielectric (ILD) layer(s), contactopenings, contact metal, as well as various contacts/vias/lines andmultilayers interconnect features (e.g., metal layers and interlayerdielectrics) on the substrate 202, configured to connect the variousfeatures to form a functional circuit that may include one or moreFinFET devices. In furtherance of the example, a multilayerinterconnection may include vertical interconnects, such as vias orcontacts, and horizontal interconnects, such as metal lines. The variousinterconnection features may employ various conductive materialsincluding copper, tungsten, and/or silicide. In one example, a damasceneand/or dual damascene process is used to form a copper relatedmultilayer interconnection structure. Moreover, additional process stepsmay be implemented before, during, and after the method 100, and someprocess steps described above may be replaced or eliminated inaccordance with various embodiments of the method 100.

With respect to the description provided herein, the present disclosureoffers methods and structures for avoiding degradation to semiconductordevices that can occur due to ion implantation processes, includingdefect formation and the introduction of channel impurities (i.e.,unwanted channel dopants). In some examples, one or more APT ionimplantation processes is performed prior to formation of FinFET finelements. In some embodiments, an epitaxially grown undoped channellayer is formed over the APT-implanted substrate. Moreover, in variousembodiments, the epitaxially grown undoped channel layer is separatedfrom the APT-implanted substrate by a dielectric layer, which serves asa barrier to APT dopants. Because of this advantageous oxide barrierlayer, the APT implant may have a high dopant concentration, forexample, of between about 1×10¹⁸ cm⁻³ and 1×10¹⁹ cm⁻³. In someembodiments, because the epitaxially grown undoped channel layer issubstantially free of dopants, carrier channel scattering is mitigated,and device mobility and drive current are improved. Embodiments of thepresent disclosure also provide methods for fully oxidizing a SiGe layerwhich subsequently serves as an oxide barrier layer (e.g., by trimmingthe SiGe layer prior to oxidation), as well as reducing and/oreliminating Ge residue (e.g., by inserting a silicon nitride liner layerprior to formation of isolation regions) without a penalty on a FinFETheight or width. The present disclosure further ensures that a topsurface of a recessed isolation region remains either substantiallyaligned with, or above, a plane defined by a fin bottom surface (e.g.,above the oxide barrier layer), thus avoiding costly AC performancepenalties. Those of skill in the art will readily appreciate that themethods and structures described herein may be applied to a variety ofother semiconductor devices to advantageously achieve similar benefitsfrom such other devices without departing from the scope of the presentdisclosure.

Thus, one of the embodiments of the present disclosure described amethod for fabricating a semiconductor device (e.g., a FinFET device)having a substantially undoped channel region. In some embodiments, themethod includes forming a plurality of fins extending from a substrate.In various embodiments, each of the plurality of fins includes a portionof a substrate, a portion of a first epitaxial layer on the portion ofthe substrate, and a portion of a second epitaxial layer on the portionof the first epitaxial layer. By way of example, the portion of thefirst epitaxial layer of each of the plurality of fins is oxidized. Insome embodiments, after oxidizing the portion of the first epitaxiallayer, a liner layer is formed over each of the plurality of fins. Invarious examples, recessed isolation regions are then formed adjacent tothe liner layer. Thereafter, the liner layer may be etched to expose aresidual material portion (e.g., Ge residue) adjacent to a bottomsurface of the portion of the second epitaxial layer of each of theplurality of fins, and the residual material portion is removed.

In another of the embodiments, discussed is a method includingdepositing a first epitaxial layer over a substrate and a secondepitaxial layer over the first epitaxial layer. In some embodiments, aplurality of fins is formed extending from the substrate. In variousexamples, each of the plurality of fins includes a substrate portion, afirst epitaxial layer portion over the substrate portion, and a secondepitaxial layer portion over the first epitaxial layer portion. Thesecond epitaxial layer portion has a height. In some examples, a linerlayer is deposited over each of the plurality of fins. An isolationregion may be formed adjacent to and in contact with the liner layer. Insome embodiments, the liner layer is etched to expose a residualmaterial portion adjacent to a bottom surface of the second epitaxiallayer portion, and the residual layer portion is cleaned. In some cases,prior to etching the liner layer, the isolation region is recessed by anamount less than the height of the second epitaxial layer portion.

In yet another of the embodiments, discussed is a semiconductor deviceincluding a plurality of fin elements extending from a substrate. Insome examples, each of the plurality of fin elements includes a firstsemiconductor layer, a dielectric layer over the first semiconductorlayer, and a second semiconductor layer over the dielectric layer. Byway of example, the second semiconductor layer includes a bottom surfacethat defines a first horizontal plane. In various embodiments, thesemiconductor device further includes a recessed isolation regionadjacent to the plurality of fin elements, where the recessed isolationregion includes a top surface adjacent to the second semiconductorlayer, where the top surface defines a second horizontal plane, andwhere the second horizontal plane is disposed above the first horizontalplane. In addition, the semiconductor device may include a gate stackformed over the second semiconductor layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of semiconductor device fabrication,comprising: providing a first fin including a first layer and a secondfin including a second layer different from the first layer, wherein thefirst layer and the second layer have different oxidation rates;oxidizing at least part of each of the first layer and the second layer;removing a portion of the oxidized part of the first layer of the firstfin; and removing the oxidized portion of the second layer of the secondfin.
 2. The method of claim 1, wherein the providing the first finfurther includes providing the first fin including the second layerdisposed over the first layer, and wherein providing the second finincludes providing the first layer disposed beneath the second layer. 3.The method of claim 2, wherein the oxidizing at least part of each ofthe first layer and the second layer includes fully oxidizing the firstlayer within each of the first fin and the second fin and oxidizing asidewall region of the second layer within each of the first fin and thesecond fin.
 4. The method of claim 2, wherein the removing the portionof the oxidized part of the first layer includes removing a top portionof the oxidized part of the first layer within each of the first fin andthe second fin, and wherein the removing the oxidized portion of thesecond layer includes removing an oxidized sidewall region of the secondlayer within each of the first fin and the second fin.
 5. The method ofclaim 2, further comprising: after the oxidizing at least part of eachof the first layer and the second layer, forming a liner layer over eachof the first fin and the second fin; etching the liner layer to expose aresidual material portion at a bottom surface of the second layer ofeach of the first fin and the second fin; and removing the residualmaterial portion.
 6. The method of claim 5, wherein the oxidized portionof the second layer of the second fin includes the residual materialportion, and wherein the residual material portion includes germanium(Ge) residue.
 7. The method of claim 2, further comprising: prior to theoxidizing the at least part of each of the first layer and the secondlayer, trimming the first layer within each of the first fin and thesecond fin.
 8. The method of claim 1, wherein the second layer includesan undoped epitaxial layer.
 9. The method of claim 1, wherein the firstlayer has a first oxidation rate, and wherein the second layer has asecond oxidation rate less than the first oxidation rate.
 10. The methodof claim 1, wherein the first layer includes silicon germanium (SiGe)and the second layer includes silicon (Si).
 11. A method, comprising:depositing a liner layer over a first fin structure and a second finstructure, wherein the first fin structure includes a first fullyoxidized layer, and wherein the second fin structure includes a firstpartially oxidized layer; etching the liner layer to expose the firstpartially oxidized layer of the second fin structure; and removing anoxidized portion of the first partially oxidized layer.
 12. The methodof claim 11, wherein the first fin structure includes a second partiallyoxidized layer disposed over the first fully oxidized layer, and whereinthe second fin structure includes a second fully oxidized layer disposedbeneath the first partially oxidized layer.
 13. The method of claim 12,further comprising: prior to the depositing the liner layer, forming thefirst fully oxidized layer by trimming a first epitaxial layer andoxidizing the trimmed first epitaxial layer, and forming the secondfully oxidized layer by trimming a second epitaxial layer and oxidizingthe trimmed second epitaxial layer.
 14. The method of claim 11, furthercomprising prior to the etching the liner layer, forming an isolationregion adjacent to the liner layer and recessing the isolation region byan amount less than a height of the first partially oxidized layer. 15.The method of claim 12, wherein the first and second fully oxidizedlayers include oxidized silicon germanium (SiGe), wherein the first andsecond partially oxidized layers include silicon (Si), and wherein theoxidized portion of the first and second partially oxidized layersincludes germanium (Ge) residue.
 16. The method of claim 12, wherein thefirst fully oxidized layer is disposed over a first substrate portion,wherein the second fully oxidized layer is disposed over a secondsubstrate portion, and wherein the first and second substrate portionsinclude ion-implanted substrate portions.
 17. The method of claim 12,wherein an unoxidized portion of each of the first and second partiallyoxidized layers includes an undoped epitaxial channel region.
 18. Asemiconductor device, comprising: a first fin element including a firstfully oxidized layer disposed over a first substrate portion, whereinthe first fully oxidized layer is an oxide of a first semiconductormaterial; a second fin element including an undoped epitaxial layerdisposed over a second substrate portion, wherein the undoped epitaxiallayer includes a second semiconductor material different than the firstsemiconductor material, and wherein the undoped epitaxial layer includesa bottom surface that defines a first horizontal plane; and an isolationregion adjacent to each of the first fin element and the second finelement, wherein a top surface of the isolation region defines a secondhorizontal plane disposed above the first horizontal plane.
 19. Thesemiconductor device of claim 18, wherein the first fin element furtherincludes another undoped epitaxial layer disposed over the first fullyoxidized layer, and wherein the second fin element further includes asecond fully oxidized layer interposing the second substrate portion andthe undoped epitaxial layer.
 20. The semiconductor device of claim 18,further including a liner layer adjacent to and in contact with thefirst substrate portion and the second substrate portion, wherein thefirst fully oxidized layer includes oxidized SiGe, wherein the undopedepitaxial layer includes Si, and wherein the liner layer includessilicon nitride.